• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Process for the chemical vapor deposition on a substrate of a protective coating composed of at least one protective layer comprising a transition metal M: a) - placing in a feed tank a stock solution containing a hydrocarbon solvent free of an oxygen atom and a bis (arene) type precursor containing the transition metal M to be deposited, b) - vaporizing said stock solution and introducing it into a CVD reactor to deposit the protective layer on said substrate, c) - collecting at the outlet of the reactor a fraction of the gaseous effluent comprising the unconsumed precursor, the aromatic byproducts of the precursor and the solvent, these species together forming a daughter solution, and d) - pouring the daughter solution thus obtained in the feed tank to obtain a new stock solution suitable for use in step a).
    公开号:FR3045673A1
    申请号:FR1562862
    申请日:2015-12-18
    公开日:2017-06-23
    发明作者:Frederic Schuster；Francis Maury；Alexandre Michau；Michel Pons；Raphael Boichot；Fernando Lomello
    申请人:Institut National Polytechnique de Toulouse INPT；Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    METHOD OF DEPOSITING A DLI-MOCVD COATING WITH RECYCLING OF THE PRECURSOR COMPOUND
    DESCRIPTION
    TECHNICAL AREA
    The present invention belongs to the field of treatments for the protection of structural parts working under severe conditions against wear, corrosion or high temperature oxidation. It relates more particularly to a process for the chemical vapor deposition of hard or uniform metallurgical coatings on surfaces to be protected.
    It relates to a process for the dry deposition of metal or ceramic layers under reduced pressure and at low temperature, by direct injection into a reactor of a solution of molecular precursor of a metal to be deposited, the effluent of the reaction being collected to feed said process with a recycled precursor solution.
    TECHNICAL BACKGROUND
    The needs of the mechanical industry (tools, industrial equipment, automotive, aerospace, etc.) and the electronics industry (semiconductors, photovoltaics) are growing in terms of materials resistant to severe production conditions and / or use. To improve the strength and extend the life of the pieces of ceramics, steels or alloys, they can be coated with a layer typically of a thickness of a few microns composed of a non-oxide ceramic compound carbide type, nitride or carbonitride or a single or alloyed metallic element. This coating improves the mechanical properties of these parts, as well as their resistance to wear and corrosion. It can be produced in a monolithic or nanostructured form in multilayers of the same type or not. Coatings based on chromium or other transition metals with similar properties are widely used for the protection of parts against wear and corrosion. In the electronics industry, the deposited coatings are even thinner films, which bring the essential functional property to the system.
    Various techniques are known that can be implemented to achieve these coatings. For a long time, metallurgical coatings (metals, carbides, nitrides, etc.), in particular those based on chromium, have essentially been obtained by the method of electroplating in a bath (or electroplating). This method was easy to implement for the run-on treatment at very low temperature (less than 100 ° C) of parts of all sizes, but it gave microfissure coatings and fragile vis-à-vis corrosion. In particular, wet deposition processes were banned in 2007 by European environmental standards because of the carcinogenic effects of the hexavalent chromium solutions they used. As for the methods using trivalent chromium, still in use today, they should also be banned soon.
    Alternative techniques of dry deposition, called clean, have been proposed among which are found chemical deposition techniques, such as chemical vapor deposition (known under the acronym CVD, for "Chemical Vapor Deposition"), which are mastered and already used in the production of certain coatings.
    For example, the chemical vapor deposition of a metal, nitrides, carbides or carbonitrides of metal elements, from a cementum consisting of a metal powder in contact with a volatile reducing compound, is known. This process operates at atmospheric pressure, but the deposits are only obtained at high temperature because of the halide-type metal source employed. Conventional CVD processes use halide vapors directly as a source of metal and operate under dynamic vacuum and at high temperature (of the order of 1000 ° C.).
    From the point of view of environmental and safety conditions, the use of thermally-robust, toxic, corrosive halide precursors and of limited volatility, which are implemented at high deposition temperatures, constitutes a major drawback of these processes. In addition, severe thermal conditions limit the possible variety of substrates to be coated.
    In order to lower the deposition temperatures, organometallic molecular precursors have been used (the so-called MOCVD method), described in more detail below. However, given the low volatility and thermal instability of these compounds which are often powders, it is necessary to operate under reduced pressure. Prolonged heating of the precursor in the sublimation zone (if it is a solid) or vaporization (if it is a liquid), even at low temperature, can degrade the reagent before it arrives at the deposition zone, thus causing reproducibility problems in terms of precursor flow rate, initial reactive gas composition and thus deposition quality.
    These difficulties have been overcome by a process combining the principle of chemical vapor deposition and the liquid injection of an organometallic precursor of the metal compound to be deposited, called DLI-MOCVD according to the acronym for "Direct Liquid Injection - Metal Organic Chemical Vapor Deposition ".
    This DLI-MOCVD process has the advantage of operating at low temperature and under reduced pressure (or even at atmospheric pressure), but imposes very particular reaction conditions for the deposition of protective layers based on a metal or a metal. carbide of this metal, having the characteristics of homogeneity and robustness required. Reference may be made here to the techniques described in WO200800714 with regard to hard coatings of metal elements (chromium or other transition metals), as well as to those described in WO2008009715 with regard to the deposition of coatings of the type non-oxide ceramic of metal elements.
    These methods of dynamic synthesis (open systems) have certain advantages, but they implement reagents (such as halides, hydrides, hydrocarbons, organometallic compounds, ...), which are far from being consumed in full during of the reaction. The reagents, the solvent and their by-products are thus found at the outlet of the reactor, forcing the industry to take measures to treat these gaseous and liquid effluents. This represents a waste of elaborate products that environmental concerns dislike, as well as a significant economic loss.
    These losses are all the more important that to obtain a good quality of the coatings in terms of uniformity of thickness, microstructure (especially density) conferring the required strength properties, moderate deposition rates must be implemented. The yields of the process are then relatively low.
    However, the design of environmentally friendly industrial processes is one of the major objectives of current research, responding in particular to the European directives established at the Goteborg Summit in 2001. The development of CVD processes, and especially DLI-MOCVD , is thus dependent on their environmental impact (effluent discharge, for example gas, solvent, heavy metals) and their economic impact (energy cost, cost of precursors - in particular organometallic compounds -, that of substrates, etc.).
    CVD processes that use large volumes of gas and complex organic and organometallic compounds are involved.
    Based on this observation, several avenues can be considered to influence energy consumption, the consumption of molecular precursors, and that of gases, whether they are reagents or carrier gases ensuring good hydrodynamics in the reactor.
    The first track, currently the most explored, is an optimization of the performance playing on the parameters of the DLI-MOCVD process to reduce the deposition time.
    However, this approach is not satisfactory because the quality requirements of the coatings are so strong and so sensitive to the deposition conditions that the windows of variation of the production parameters are too narrow to reconcile all the constraints.
    The second route would be to reduce the consumption of reagents and process gases (gases used in the process, but not involved as a reagent, such as a carrier gas). Attempts to modify the reaction conditions to reduce the amount of reactants injected into the reactor have unfortunately failed to obtain the desired coatings. For the reasons mentioned above, the possibilities of varying the parameters of the process are again greatly reduced.
    To meet this challenge, the authors of the present invention have imagined not to modify the reaction conditions as such by reducing the total amount of reagents injected into the reactor, but to reuse the compounds discharged at the outlet of the reactor, in order to recycle them in the process.
    CVD processes implementing a recycling step have already been proposed. For example, CVD processes are known where a graphene / Cu substrate is recycled, the metal also being the catalyst (Wang, Y., et al., ACS Nano, 2011. 5 (12): 9927-9933). We also know the recovery of precious metals used in electronics (Pt, Ru, Au ...) in the effluents, in the form of either metals or recycled precursors for later use, after the appropriate chemical treatments (International, R. 2010, available at http://www.recyclinginternational.com/recycling-news/ 34 64 / research-and-legislation / japan / j apanese recycling-process-ruthenium-precursors). These technological solutions that aim to lower the overall cost, are very limited and are not applicable in DLI-MOCVD.
    Solutions have been proposed for certain CVD processes that consume large quantities of gases and reagents, for example for the industrial production of carbon nanotubes. The relatively simple mixture of H2 / C2H4 hydrocarbons produces no less than 45 by-products, including Volatile Organic Compounds (VOCs) and Polycyclic Aromatic Hydrocarbons (PAHs) (Plata, DL, et al., Environmental Science & Technology). , 2009. 43 (21): 8367-8373). If the trapping and recycling of these compounds allow their subsequent use, it is at the cost of a complex and expensive treatment, carried out in parallel with the first process (and not directly in the process itself, in closed loop or semi closed with reinjection into the reactor).
    Recycling systems are also used in CVD mass production of polycrystalline silicon for photovoltaic and microelectronic applications. For example, the beneficial effect of loop recycling on the uniformity of thickness of polycrystalline silicon films obtained in a low pressure CVD tubular reactor using the SiH 4 / H 2 reaction mixture is known. The thickness of the film is all the more uniform as the gases are continuously and perfectly stirred, which recycling contributes to achieve (Collingham, ME et al., Journal of the Electrochemical Society, 1989. 136 (3): p. 787-79.4).
    For the solar industry, the CVD process uses S1CI4 and H2 in large excess, a converter converting S1CI4 to HS1CI3 for faster growth of Si. Only 20% of HS1CI3 is consumed and by-products are formed (chlorosilanes, HCl, H2). The effluents are collected, separated and stored for another use, while unused HSiCl3 is recycled into the process (Project, PP 2010, Vent Gas Recovery and Recycle Process Technology Package, available at: http: //www.polyplantproj ect.com/off gasrecoveryrecycling.html). With this chlorine CVD process, a quasi-closed loop system has been proposed, playing on the etch / deposition equilibrium of the chemical system and relying on thermodynamic and kinetic simulation (Noda, S., et al., Conference Record of the Twenty-Ninth IEEE 2002). On the other hand, H2 recycling via an integrated system in a SiH4 / H2 process has recently been developed (Revankar, V. and S. Lahoti, 2015, Savi Research, Inc.).
    It should be noted that in all CVD silicon deposition technologies with loop recycling, the reaction by-products are small in number. These are hydrides derived from S1H4, halides derived from S1CI4 or in the case of the carbon deposition of hydrocarbons derived from CH4, all gaseous at working temperature, and which have the same thermal behavior as the precursor initial. They are reactive sources for deposition that do not substantially affect the growth mechanism or the kinetics of reaction.
    It thus appears that no method currently provides for the recycling of organometallic compounds involved in MOCVD film deposition processes and even less by DLI-MOCVD. It is true that because of their high reactivity and the complexity of their decomposition mechanisms, numerous and very different by-products are generated. It is expected that the recycled product will differentiate too much to meet the initial requirements, and that the purity, microstructure and growth kinetics of the coatings will be significantly affected.
    EXHIBIT OF 1 / INVENTION
    One of the aims of the invention is therefore to avoid or mitigate one or more of the disadvantages described above, and in particular to reduce or even eliminate the use, generation and release of substances harmful to the environment, when producing protective coatings on mechanical parts or other by the technique of DLI-MOCVD.
    In this context, an object of the invention is to provide a "clean" MOCVD chemical deposition process, that is to say, environmentally friendly. This is to prevent the production of waste from chemical deposition reactions, rather than invest in their disposal, which allows the present invention. Another object of the invention is to provide a deposition process operating under low temperature and moderate pressure conditions to minimize industrial constraints and energy requirements, so as to limit the economic and environmental impact of the process.
    Another object of the invention is to provide a recycled injectable solution in a DLI-MOCVD reactor, making it possible to reuse the compounds formed and / or not consumed in a preceding cycle of the reaction, for the production of a protective layer of a substrate.
    These objectives are sought by maintaining, if not improving, the quality and performance of the coatings obtained with conventional technologies.
    To meet one or more of these objectives, the invention firstly relates to a process for depositing a protective coating of a substrate according to the DLI-MOCVD technique, in which process certain effluents present at the outlet of the reactor are collected. .
    Another object of the invention is a method according to which a part of the discharged effluents is recycled for reuse in the process, without the performance of the process being reduced or the quality of the deposits is degraded. The invention more particularly relates to a deposition process according to the DLI-MOCVD technique of a protective coating comprising a transition metal, which is provided via a precursor molecular compound, from a reservoir. which is fed with a recycled fraction of the gaseous effluents of the reaction. The invention is advantageously completed by the following features, taken alone or according to any of their technically possible combinations.
    DETAILED DESCRIPTION OF THE INVENTION
    In the present description of the invention, a verb such as "understand", "incorporate", "include" and its conjugate forms are open terms and do not exclude the presence of one or more elements or steps in addition to the initial elements or steps set out after these terms. These open terms are further directed to a particular embodiment in which only the element (s) and / or initial step (s), to the exclusion of any other, are targeted; in which case the term open also refers to the closed term "consisting of", "constituting" and its associated forms. The use of the undefined article "a" or "an" for an element or a step does not exclude, unless otherwise stated, the presence of a plurality of elements or steps.
    In addition, unless otherwise stated, terminal values are included in the parameter ranges shown.
    Thus, the subject of the present invention is a process for the chemical vapor deposition on a substrate of a protective coating composed of one or more layers, at least one being a protective layer comprising a transition metal M in the form of of a material selected from a carbide, an alloy or a metal, the method comprising the following steps: a) - disposing in a feed tank, a stock solution containing, in a hydrocarbon solvent free of oxygen atom, a bis (arene) type precursor comprising the transition metal M to be deposited and having a decomposition temperature of between 300 ° C. and 600 ° C., b) - vaporizing said stock solution and introducing it into a chemical deposition reactor; vapor phase in which said substrate to be coated is deposited, for depositing the protective layer on said substrate at a temperature of between 300 ° C. and 600 ° C. under reduced pressure, c) - coll discharging at the outlet of the reactor a fraction of the gaseous effluent comprising the unconsumed precursor, the aromatic byproducts of the precursor and the solvent, these species forming together under standard conditions a daughter solution, and d) - pouring the daughter solution thus obtained in the feed tank to obtain a new mother solution suitable for use in step a).
    The deposition process is carried out according to the DLI-MOCVD technique in a hot-walled reactor, conventionally used in this field and operating under reduced pressure. The reactor as a whole is heated to the temperature required for the deposition, so that the walls, the reactive gas phase circulating in the reactor as the substrate to be coated, are at the same temperature. This type of reactor is also called "isothermal" (or "quasi isothermal" because some temperature gradients remain).
    A cold wall reactor can also be used. In this case, the efficiency of the reactor, determined from the consumption of precursor, is low, which increases the interest of a recycling reagents.
    It is recalled that the principle of the DLI-MOCVD technique is to introduce directly into a chemical vapor deposition chamber, in continuous or pulsed mode, a precursor of the metal to be deposited in vaporized form. To do this, a molecular solution of the metal precursor is introduced into an evaporator, from a pressurized feed tank (for example under 3 bar of inert gas (N2), ie 3.105 Pa), containing said precursor in a adequate solvent. The solution is fractionated into microdroplets to form an aerosol that is flash vaporized. "Flash" evaporation consists in quickly vaporizing a compound outside the pressure and temperature conditions provided by its saturation vapor pressure law. The evaporator is heated to a temperature such that the precursor and its solvent are vaporized without causing decomposition at this stage. The temperature is conveniently between the boiling point of the solvent and the decomposition temperature of the precursor (and incidentally the solvent), typically around 200 ° C.
    The injection parameters of the precursor solution are preferably set using a computer program. They are adjusted so as to obtain a fog of very fine and numerous droplets, in order to obtain a satisfactory flash evaporation under reduced pressure. The liquid injection thus constitutes a well-controlled source of organometallic precursor, which does not limit the possibilities of optimizing the parameters of the coating deposition process.
    The vaporized precursor and solvent are entrained by a flow of neutral gas from the evaporator to the deposition zone of the reactor in which the substrate to be coated has been placed, which may or may not rest on a sample holder. The carrier gas used is preferably preheated to the maximum temperature of the evaporator to obtain efficient vaporization. It is neutral in that it is not likely to react with the reactants in the presence, by oxidizing them for example). Nitrogen is generally chosen for its low cost, but helium with better thermal conductivity or argon with superior protection can also be used.
    The precursor organometallic compound used is a molecular compound in which a transition metal M, intended to react to form a protective coating on the substrate, is complexed with organic ligands, which are in this case two arene groups. Among the precursors employed, there are in particular sandwich compounds in which the metal atom M at zero oxidation state is bonded to two aromatic rings, which may be substituted by at least one alkyl group.
    According to the invention, the enclosure of the reactor is heated to a temperature of between 300 ° C. and 600 ° C. This temperature range is defined so as to allow the decomposition of the bis (arene) metal used as a precursor, but without degrading the solvent, so as not to generate by-products likely to pollute the enclosure by being deposited on the walls of the reactor or on the substrate. It is further recommended, if the substrate to be coated is metallic, such as for example alloy, to limit the temperature to 550 ° C, considered as their withstand temperature, to avoid deformation or phase transformations in case these are presented.
    The reactor is placed under reduced pressure, at which the main deposition steps are carried out, from the evaporation of the precursor solution, to the collection of the effluent. Reduced pressure is commonly understood to mean pressures of a few Torr to a few tens of Torr. It is therefore a moderately reduced pressure with respect to the pressures of about 1CT3 Torr to 1CT4 Torr of industrial PVD processes that require high vacuum equipment.
    Thus, according to a preferred feature of the invention, step b) of vaporization and deposition and step c) of collecting said fraction of the effluent, are carried out at a reduced pressure of between 1 Torr and 50 Torr ( in SI unit, between 133 Pa and 6666 Pa).
    The transition metal M to be deposited is typically chromium, or any other metal whose chemistry and metallurgy are related to those of chromium. Those skilled in the art know the elements for which the properties of hardness and chemical inertia required in metallurgy are obtained. A metal is chosen which is capable of forming a compound bis (arene). Thus, according to a characteristic of the deposition process according to the invention, the transition metal M to be deposited is selected from Cr, Nb, V, W, Mo, Mn, Hf.
    A precursor is also preferably selected in which the metal M is at the zero oxidation state. Deposits made will be metal or carbide coatings. Since the transition metal M has the same degree of oxidation as in the deposited coating (the carbides being insertion carbides, the transition metal M has the zero oxidation state), the precursor decomposes thermally without complex reaction, for example oxidation-reduction generating numerous by-products.
    According to a particular embodiment of the invention, a precursor compound is chosen in which the transition metal M is chromium at the zero oxidation state.
    The precursor metal is bonded to organic ligands, which are aromatic groups, giving it the desired thermal stability in the chosen temperature range. According to the invention, the precursor is preferably a bis (arene) devoid of an oxygen atom, of general formula (Ar) (Ar ') M where M is the transition metal M at the zero oxidation state and Ar , Ar ', identical or different, each represent an aromatic group of benzene or benzene type substituted by at least one alkyl group.
    Since the stability of the metal-ligand bond increases substantially with the number of substituents of the benzene ring, it is advantageous to choose a precursor in which Ar and Ar 'represent two weakly substituted aromatic ligands. Thus, according to the invention, the aromatic groups Ar and Ar 'preferably each represent a benzene radical, or benzene substituted with one to three identical or different groups, chosen from a methyl, ethyl or isopropyl group.
    It has been found particularly interesting that the mother solution can provide the reaction with different precursors, without negatively influencing the process. In particular, the exact nature of the aromatic ligands of the metal is not critical, provided that these ligands belong to the same chemical family of low substituted monocyclic aromatics. This therefore makes it possible to envisage the reintroduction into the reactor of by-products of the CVD reaction derived from the initial reactants, even if the products collected at the reactor outlet have structural variations between them. The purity of the initial stock solution is also not a critical point, which makes it possible to use commercial solutions that can contain up to 10% of derivative compounds. Since recycling of these derived compounds in the process itself is possible, the recycled stock solutions to be used for subsequent deposition will contain different bis (arene) as precursors.
    Thus, according to a preferred feature of the invention, said stock solution can contain a mixture of several precursors of the metal M, of general formulas (Ar) (Ar ') M different. By way of example, when the metal is chromium, the precursor may be a chromium sandwich compound, such as bis (benzene) chromium (called BBC, of formula Cr (C6H6) 2), bis (ethylbenzene ) chromium (called BEBC, of formula Cr (CeHsEt) 2), bis (methylbenzene) chromium (of formula Cr (CeHsMe) 2), and bis (cumene) chromium (of formula Cr (CeHsiPr) 2), or their mixed. It can also be an asymmetric derivative of formula (Ar) (Ar ') Cr where Ar and Ar' are different; or a mixture of these bis (arene) chromium which can be rich in one of these compounds.
    Only the BBC is in the form of a powder. It can be injected in the form of a solution, but the concentration is then rapidly limited by its low solubility in hydrocarbon solvents.
    The other precursors mentioned are liquid and can be directly injected without solvent, but this does not allow to control the microstructure of the deposits. Their use in solution is preferred because it allows a wide variation in the concentration of said solution, a better adjustment of the injection conditions and consequently of the physical properties. They all decompose from about 300 ° C.
    Precursors having a decomposition temperature greater than 600 ° C are discarded, in order to avoid the decomposition of the solvent for the reasons explained below.
    The solvent of the precursor compound plays an important role in the successful completion of the deposition process according to the invention. Its choice preferably meets all the chemical and physical criteria that follow. First, the boiling point of the solvent should be below the evaporator temperature to allow flash evaporation in the evaporator. It must not contain oxygen to prevent oxidation of the deposits by cracking the solvent used in the deposition zone. It must be chemically inert with respect to the precursor in solution and liquid under standard conditions of pressure and temperature. In the present description, the standard conditions are atmospheric pressure and a temperature of 25 ° C. Finally, it must effectively solubilize the precursors, which is favored by the aromatic nature of the solvent because of their chemical proximity.
    Another condition is that the solvent does not decompose significantly in the reactor, so that it does not generate pollution and is recoverable in the effluent outlet.
    Thus, the solvent is preferably a monocyclic aromatic hydrocarbon of the general formula CxHy, liquid under standard conditions, having a boiling point below 150 ° C and a decomposition temperature above 600 ° C.
    In the context of the present invention, it is particularly appropriate for the solvent to belong to a chemical family close to that of the ligands of the precursor compound, namely that of aromatic hydrocarbons (or arenes). Indeed, during the passage in the reactor, the precursor is thermally decomposed, releasing its ligands one after the other. By-products of the reaction are essentially free arenas, which will mix with the solvent all the better that they will be chemically close or identical. As a result, the compounds collected in the effluent at the reactor outlet (precursor, by-products of the CVD reaction and solvent) are all aromatic hydrocarbons. Aliphatic by-products of the alkane / alkene type comprising 2 to 4 carbon atoms and which result from the decomposition of the aromatic solvent are probably present in a small amount. As detailed below, these compounds which are gaseous under standard conditions, will not be collected in step c) of the process, unlike the collected compounds which are themselves liquid.
    Thus, according to the invention, the solvent is preferably selected from benzene, or benzene substituted with one or more groups, identical or different, selected from a methyl, ethyl or isopropyl group.
    According to a particularly preferred embodiment of the invention, the solvent is benzene, toluene, ethylbenzene or mesitylene (1,3,5-trimethylbenzene). It is also possible to use as a solvent a mixture of these compounds. In practice, however, benzene is excluded because of its high toxicity, especially as a proven carcinogen.
    When it is desired to obtain the deposition of a hard metal coating on the substrate, it is preferable to provide a chlorinated or sulfur-containing additive whose function is to prevent the heterogeneous decomposition of the aromatic ligands of the precursor. Indeed, during the dissociation of the metal-ligand bonds, a portion of the hydrocarbon ligands decompose under the catalytic effect of the surface and provide their carbons, which bind with the transition metal to form carbide-type ceramics. Therefore, in an alternative embodiment of the method according to the invention, said stock solution further contains a chlorinated or sulfur-containing additive, devoid of oxygen atom and whose decomposition temperature is greater than 600 ° C. This additive is otherwise miscible in standard conditions.
    As indicated previously, it is advantageous that the compounds introduced into the reactor can be recycled (themselves or their by-products) without affecting the reaction. The additive is therefore preferably a monocyclic aromatic hydrocarbon substituted with a thiol group or at least one chlorine. Even more preferably, the additive used is thiophenol or hexachlorobenzene.
    The gases that pass through the reactor are those that have been introduced upstream. At the outlet of the reactor, the gaseous effluent comprises precursor molecules, the solvent (and the chlorinated or sulfur-containing additive if appropriate), which have not been consumed or pyrolyzed. The effluent also comprises free ligands dissociated from the precursor, which are of the same aromatic family as the solvent. They integrate into the basic solvent with which they are perfectly miscible, and will play themselves the role of solvent.
    Surprisingly and particularly interesting, the majority of the compounds at the outlet of the low temperature reactor are monocyclic aromatic molecules with a chemical structure similar to or identical to that of the initial compounds which are the precursor or the solvent. It is therefore interesting to collect them. They are gaseous at the reactor outlet because of temperature and pressure conditions, but liquid under standard conditions. The mixture thus collected will form a solution, called daughter solution, which can be introduced into the reactor feed tank as a new mother solution suitable for use in step a) of the coating process.
    However, the effluent also comprises compounds derived from aromatic molecules by thermal fragmentation, as well as by-products of the reaction of the precursor with the substrate. These fragments resulting from the decomposition of C6 aromatics are essentially light aliphatic hydrocarbons of alkane, alkene or C2-C4 alkyne type. In order to efficiently collect the compounds intended to form the daughter solution, it is possible to take advantage of the difference in condensation temperatures between the aromatic compounds and the light hydrocarbons. The species of interest (essentially the arenas therefore) are discriminable by their melting point, so that a device capable of causing the condensation of the species in a predefined temperature range is adapted to the collection carried out in step c). We will thus get rid of light hydrocarbons which, although in secondary quantities, must be eliminated.
    Thus, according to a preferred embodiment of the invention, in step c), the collection of said fraction at the outlet of the reactor comprises a selective condensation operation of the species present in the effluent leaving the reactor.
    A device adapted to capture by selective condensation the unconsumed precursor and solvent, as well as the aromatic by-products of the CVD reaction, is for example a cryogenic trap. This type of trap, which can go down to the temperature of the liquid nitrogen, consists of a piece forcing the passage of the gas phase through a pipe sufficiently cooled to condense these species. It can be set in a suitable temperature range to condense and solidify the gaseous species to be recycled, preferably between -200 ° C and -50 ° C. The temperature depends on the chosen cryogenic bath (-100 ° C with a supercooled ethanol trap and -200 ° C with a liquid nitrogen trap), and is adjustable (we can refer for example to the data tables published in "Handbook of Chemistry and Physics, CRC Press".
    Preferably, according to the invention, the selective condensation of the species present in the effluent is achieved by cryogenic trapping at a temperature of between -200 ° C. and -50 ° C.
    This cryogenic trapping operation taking place at the reduced pressure prevailing in the system, it is then necessary to break the vacuum by an inlet of inert gas and to return to room temperature, which can be done by a method known to man art. A liquid fraction is thus collected which is the daughter solution.
    Thus, according to the invention, said condensed fraction is brought back to the standard conditions of temperature and pressure, and the species remaining in the liquid phase which form a daughter solution are preserved. The gaseous species are eliminated. Since these are light aliphatic hydrocarbons, these highly volatile compounds are much less efficiently trapped than the others with a cryogenic trap. They are partly eliminated during selective condensation. Then, being in the gas state under standard conditions, they are easily driven by the vacuum pump equipping the system.
    This has a significant advantage since most of the effluent material is trapped for recycling. The small species formed during the reaction are few in quantity and in kind.
    It has been verified experimentally that the effluents trapped at the outlet of the reactor are a mixture of a) unconsumed precursor, b) solvent of the mother solution which has not been pyrolyzed, and c) free ligands, (possibly with a chlorinated or sulfur additive). There are some organic compounds derived from the decomposition of trace ligands only. At the end of step c) of the process of the invention, a daughter solution characterized by a precursor / solvent ratio certainly lower than that of the mother solution is obtained, but almost without any other organometallic source likely to affect the deposit mechanism. This result was unpredictable because it is known that the decomposition of organometallics leads to the formation of numerous by-products, some of which can recombine with the released metal to give new compounds very different in their thermal behavior in particular. It is remarkable that, contrary to the general case, all the metal resulting from the decomposition of the precursor participates in depositing the coating, without reacting with compounds formed in the reactor. No new organometallic compound is thus formed during the reaction.
    This trapping of the species to be recycled can be done for sampling purposes, for example to carry out subsequent analyzes (ex situ diagnosis). It can especially be performed during a deposition operation, for reuse of the daughter solution trapped in a second deposition operation (batch batch operation), or also in a loop recycling system that can be automated.
    Indeed, the collected daughter solution contains the precursor which can feed the CVD reaction further, but its concentration in the solvent is lower than it was in the mother solution initially. It may therefore be useful to determine this concentration, to know the amount of reagents collected. The analysis of the collected daughter solution can be done simply, for example by a spectro-colorimetric method and comparison with a standard straight line. An online device can be integrated with the CVD equipment.
    According to a preferred embodiment of the invention, step c) of collecting said fraction at the outlet of the reactor is followed by a step c) of determining the concentration of the precursor in the daughter solution obtained.
    Depending on the results of this determination, it may be decided to adjust the precursor concentration, so that the CVD process proceeds properly from a deposition rate point of view. The concentration adjustment may consist of a pure precursor addition to the daughter solution that will be made to reconstitute a stock solution, or an addition directly into the feed tank to complete the new stock solution. Thus, the method according to the invention may comprise, in step d), a dO) operation for adjusting the precursor concentration, as a function of the concentration of the daughter solution poured into the feed tank.
    Alternatively, it may be based not on the concentration, but on the amount of precursor collected. In this case, it is possible to introduce into the reservoir a volume of daughter solution supplying the desired quantity of reagent. This last way of proceeding is convenient. It is made possible by the tests carried out showing that the precursor concentration is not a critical parameter of the reaction dynamics.
    According to a particular embodiment of the invention, the process can be carried out in batches, in a discontinuous manner (called "batch"). In this case, the daughter solution collected at the end of step c) is collected and will be later discharged into the feed tank, for the treatment of a new substrate. If this treatment is not performed immediately, the solution is stored so that it is stored properly. Step c) of collecting said fraction can then be followed by a step c2) of storage of the obtained daughter solution. This storage is ideally done in a refrigerated container protected from light, in an inert atmosphere, for example under argon pressure, or other dry gas (N2 for example), provided that it is not oxidizing .
    The daughter solution collected is less concentrated in precursor than was the mother solution initially used, so that the amount of precursor collected is generally insufficient to perform a deposition operation. The precursor must be trapped for at least two CVD deposition operations to have sufficient daughter solution for a new deposit of a thickness similar to that obtained when using the initial stock solution (at least 1 μm thick) . The daughter solutions generated during different deposition operations can be advantageously collected, in order to accumulate a quantity of precursor sufficient to feed the mother solution reservoir for a new deposition operation.
    In this case, advantageously, the steps a) to c) of the process according to the invention are repeated sequentially N times, the N daughter solutions are collected, then step d) is carried out by pouring said N daughter solutions into the feed tank to obtain a new mother solution suitable for use in step a). N solutions can be stored as they are collected away from light in a refrigerated container under inert atmosphere.
    Once the necessary amount of precursor has been reached in this new stock solution, a very small amount can be taken for quantitative analyzes of the precursor concentration. Then, the tank can be directly connected to the injection system for a new operation, alongside a tank of pure solvent to clean the reactor. The deposit procedure is then the same as before. The advantage of this approach is to minimize the loss of organometallic precursor, which improves the environmental impact and overall decreases the cost of the DLI-MOCVD process.
    A particularly interesting and important variant from an industrial point of view of the deposition process according to the invention is to reuse in loop the daughter solution obtained from the condensed species. These can indeed be extracted continuously because they are compounds of low volatility compared to by-products of decomposition of aromatic ligands, source of the incorporation of carbon in the deposits. They are therefore easily separable, as explained above, by selective condensation in a cryogenic trap.
    According to this variant, the daughter solution obtained in step c) is discharged in continuous mode into the feed tank, during the chemical vapor deposition process. Steps c) and d) can be controlled by an automatic system to ensure a circulation loop. A device makes it possible to pass from the zone of low pressure at the level of the cryogenic trap, up to the pressurized feed tank, by a "chain" of variation of pressure.
    As we have seen, recycling is not universally applicable in CVD. It is related to the chemical system that is implemented and has been made possible only by a specific choice of molecular precursors.
    The satisfactory results obtained are all the more surprising as the chemical and structural characteristics of the deposited coatings are identical, regardless of the precursor / solvent composition of the injected stock solution, which has been verified experimentally. The physical and mechanical properties of these coatings are also, if not similar, at least comparable.
    Finally, and unexpectedly, it has been shown that it is possible to increase the efficiency of the process very substantially, to almost 100%. It is therefore now possible to envisage layer deposits almost continuously to achieve high coating thicknesses. In addition to improving the environmental impact resulting from a zero discharge of organometallic compounds, the cost of the process is greatly reduced, the price of the precursor contributing significantly to the overall cost.
    It may be interesting to value the solutions developed from the effluents collected at the end of the deposition process of the invention. Indeed, these solutions are of complex composition and they are sources of precursor for surface treatments by DLI-MOCVD. As previously indicated, they can either be used in a loop directly in the process from which they come, or stored for later use. Beyond the advantages already mentioned, they are in this respect of their own commercial interest. This is the case in particular with regard to organometallic precursors of bis (arene) chromium type which are known to be sensitive to air and moisture. On the other hand, they are less reactive to the atmosphere when they are in solution. Recycled solutions therefore have a protective effect vis-à-vis the precursor.
    The method of the invention makes it possible to deposit a protective coating which can be produced in a monolithic or nanostructured form, in multilayers of the same type or not. It can be deposited on different metal substrates (alloys, ...), ceramics (carbides), or metalloids (polycrystalline silicon for example), or other materials, as long as they are able to withstand a temperature of between 300 ° C and 600 ° C, or at least about 550 ° C. These substrates are intended for various industrial fields, such as, for example, tooling, automotive, aeronautics, microelectronics, energy-related technologies such as, for example, photovoltaics.
    Thus, according to the invention, said substrate to be covered may be a piece of metal, alloy, ceramic or silicon. The substrate may also be made of another material supporting heat treatment at about 550 ° C. Other objects, features and advantages of the invention will now be specified in the following description of particular embodiments of the method of the invention, given by way of illustration and not limitation, with reference to the accompanying figures.
    BRIEF DESCRIPTION OF THE FIGURES
    FIG. 1 shows the UV-Visible transmittance spectra of non-depositing quartz slides (White) and after treatment at 500 ° C., 600 ° C., 750 ° C. and 800 ° C. during the injection of toluene alone (without precursor bis (ethylbenzene) chromium).
    Figure 2 shows the evolution of the intensity of the absorbance at the wavelength of 500 nm measured on the transmittance spectra of Figure 1 as a function of the pyrolysis temperature.
    Figure 3 shows a calibration line for the BEBC in UV-visible spectrophotometry.
    Figure 4 shows a comparison of the microstructures of the coating obtained with new precursor and recycled precursor (sectional views).
    Figure 5 shows a comparison of the microstructures of the coating obtained with new precursor and recycled (views from above).
    Figure 6 shows a comparison of the EDS spectra of the coating obtained with new precursor (top) and recycled (bottom).
    Figure 7 presents a comparison of the X-ray diffractograms of an amorphous chromium carbide coating obtained with new precursor (top) and recycled precursor (bottom)
    DESCRIPTION OF PARTICULAR EMBODIMENTS
    The particular embodiments of the process of the invention relate to the deposition of chromium-based coatings (chromium or chromium carbides) by decomposition of the two precursors BBC or BEBC, in toluene taken as the solvent.
    EXAMPLE 1: DEPOSITION OF CHROMIUM CARBIDE
    The deposition of a coating of chromium carbide CrC was carried out under the following conditions:
    Injection conditions: - opening time of the injector: 0.5 ms - frequency: 10 Hz Reagent: BEBC (5 g)
    Solvent: Toluene (50 mL)
    Carrier gas: N2 (flow rate of 500 sccm, ie 500 cm3 / min under standard conditions)
    Duration of the deposit: 20 mn
    Reactor temperature: 450 ° C; pressure: 50 Torr Evaporator temperature: 200 ° C Cryogenic trap temperature: -120 ° C Amount of daughter solution recovered: 30 mL
    Two NI and N2 experiments were performed with a BEBC stock solution, and in a third experiment the two daughter solutions recovered to form a recycled stock solution which was used as a precursor source to perform a third N3 deposition operation.
    For NI and N2, the thickness of the deposit is typically 5 μm. A deposit of about 1.5 μm is obtained at the end of N3. The BEBC concentration was determined and the yield calculated for NI and N2 (see Table 1).
    Table 1
    EXAMPLE 2: METAL CHROME DEPOSITION WITH RECYCLING OF THE PRECURSOR
    The deposition of a chromium metal coating Cr was carried out under the following conditions:
    Injection conditions: - opening time of the injector 0.5 ms - frequency 10 Hz Reagent: BEBC (5 g)
    Solvent: Toluene (50 mL)
    Additive: Thiophenol C6H5SH (with additive molar ratio on precursor of 2%)
    Carrier gas: N2 (flow 500 sccm)
    Duration of deposit: lh
    Reactor temperature: 450 ° C; pressure: 50 Torr Evaporator temperature: 200 ° C Temperature of the cryogenic trap: -100 ° C.
    Amount of daughter solution recovered: 30 mL
    Two experiments were necessary to recover 60 mL of daughter solution. The mother solution thus recycled was reinjected into the reactor, to carry out a third depositing operation under the same conditions, to give a deposit of approximately 1 μm.
    EXAMPLE 3: CHOICE OF A SOLVENT, TOLUENE
    In order to study whether toluene can be used as a solvent in the process according to the invention, it has been verified that it does not decompose in the temperature range swept by the process and under hydrodynamic conditions comparable to the actual conditions of deposits by DLI-MOCVD.
    Tests were carried out by injecting only toluene into the CVD reactor. Quartz slides are placed in the CVD reactor chamber on a sample holder and after each deposition, a UV-Visible transmittance spectrum is recorded. Several reactor temperatures were tested between 500 ° C and 800 ° C. The spectra obtained are shown in FIG. 1. The spectrum of a control slide, which has not undergone carbon deposition, is also represented (white).
    The transmittance at the wavelength of 500 nm was recorded for the different reactor temperatures. It is found that above 600 ° C, the average transmittance decreases, indicating that the quartz plate opacifies following the formation of a thin film of carbon. It is reasonable to think that toluene begins to decompose at this temperature, with an increase to 750 ° C, even more marked around 800 ° C as shown in Figure 2.
    Therefore, toluene is a suitable solvent for deposits whose temperature does not exceed 600 ° C.
    Moreover, this result suggests that when a bis (arene) chromium precursor decomposes by releasing benzene ligands, they do not decompose below 600 ° C in the homogeneous phase either.
    EXAMPLE 4: ASSAY OF PRECURSORS
    Many techniques exist to know the concentration of precursor solutions used, all more or less reliable and cumbersome to implement. The precursor concentration of the stock solution initially injected into the deposition CVD reactor is known. The one to be accessed is the concentration of the recycled daughter solution.
    For this, we take advantage of the fact that BBC and BEBC have an absorption band at 315 nm in the UV range, which can be monitored spectrophotometrically (Douard, A., in CIRIMAT Carnot Institute, 2006). , INP Toulouse). This absorption band corresponds to the charge transfer transition M (4e2g) → L (5e2g), generated by the chromium-ligand binding of the precursor molecule, which bond will be broken in the initial phase of the growth mechanism of the precursor molecule. coating.
    The principle is as follows. The Beer-Lambert law, connecting the concentration to the absorbance is: A = ε * C * 1, with A: the absorbance of the solution at 315 nm; ε: the molar extinction coefficient of the precursor; C: the precursor concentration; 1: the length of the tank.
    A calibration line is first constructed from solutions of different known concentrations whose absorbance is measured (see Figure 3). The concentration of any solution can then be determined by UV-visible spectrophotometry: its absorbance is measured, plotted on the calibration line, from which the value of the corresponding concentration is read. Access to trap and reactor yields is possible. By taking a small volume of daughter solution out of the reactor, we can determine its concentration and decide if necessary to enrich the precursor to the desired value for reinjection into the system. Measurement of the absorbance of the daughter solution can also be conceived online by integrating an optical tank into the daughter solution recovery circuit. This is a non-destructive method of analysis.
    EXAMPLE 5: COATINGS OBTAINED ON VARIOUS SUBSTRATES
    No precise elementary mechanism has been advanced to account for the growth of chromium carbides or metallic chromium by decomposition of the precursor BBC or BEBC, nor has the influence of the presence of toluene on the mechanism been explained. reaction. In addition, the data available for working temperatures below 600 ° C are very rare.
    The demonstration has therefore been made experimentally of obtaining by the process object of the invention, films having the desired characteristics. A) - The characteristics of the films do not depend on the precursor concentration of the injected solution.
    Despite numerous variations in the parameters that can vary the precursor concentration of the injected solution (and by extension of the reactive gas phase sent into the reactor), the films obtained are comparable. The following parameters were tested: - Nature of the precursor used BEBC;
    Injection parameters modulating the proportion of solution injected with respect to the carrier gas flow rate: frequency between 1 Hz and 20 Hz; opening time between 0.5 ms and 5 ms;
    Quantities of precursor and solvent (therefore concentration directly): precursor concentrations of 1.0 x 10 -2 mol.L-1 at 5.times.10.sup.-1 mol.L-1.
    Injecting a new precursor solution and a recycled precursor solution does not change the characteristics of the films (see below). The compositions of the films obtained, of amorphous chromium carbide type, of composition close to Cr7C3 are always similar. The morphologies are also equivalent, with a typical microstructure of an amorphous, homogeneous film, a completely dense and very smooth layer.
    The spectrophotometric colorimetric assay made it possible to measure that the recycled precursor-based solution was about 60% less precursor-concentrated than the new precursor-based solution, without affecting the quality of the deposited films. On the other hand, the fact that these characteristics are independent of the precursor / solvent ratio is consistent with previous results that have shown that MOCVD (non-solvent) deposits are also comparable, as well as DLI-MOCVD (with solvent) deposits with cyclohexane instead of toluene. This is consistent with the fact that the solvent does not interfere with the precursor decomposition mechanism and is not itself decomposed during the process. B) - Morphology, microstructure (SEM, roughness)
    The microstructures obtained are similar in all respects during SEM (scanning electron microscope) observations. The coating is dense, compact and homogeneous in thickness over the entire surface of the sample, as shown in Figure 4. The interface with the substrate Si is well defined. In addition, in top view (see Figure 5), they have the same very smooth appearance with some elements of surface pollution. The maximum thicknesses achieved with the new precursor are significantly greater than those with the recycled precursor because the concentration of the recycled solution was lower. Since a lot of precursor is consumed in the reactor, only a small part is recovered thanks to the cryogenic trap. C) - Composition (EDS, ΕΡΜΑ)
    The EDS spectra are also comparable, with a slight visible oxygen pollution in both cases, new precursor or recycled precursor. The peaks of chromium and carbon have identical intensities, as shown by the spectra in Figure 6.
    The elementary compositions found with the microprobe analyzes (ΕΡΜΑ) reveal no obvious disparity between the samples prepared with the new or recycled precursor: BEBC - 500 ° C (amorphous): Cr0.65Co, 320o, o3 normalized to
    Cr0.67C0.33 and C / Cr = 0.49 BEBC - 450 ° C (amorphous): Cr0.64Co, 330o, o3 normalized to
    Cr0.66C0.34 and C / Cr = 0.52 - BEBC recycled - 450 ° C (amorphous): Cr0.64Co, 3oOo, O5 normalized to Cr0.68Co, 32 and C / Cr = 0.48
    As a reminder, the C / Cr ratio is 0.43 for Cr7C3 and 0.66 for Cr3C2 · The average composition observed is therefore very close to Cr7C3. D) - Structure (DRX, MET) XRD analysis always gives amorphous coatings, characterized by the broad hump which is centered at 2Θ = 42 °. Examples of dif fractograms obtained for deposition from new and recycled precursor are shown in Figure 7. The broad bump centered around 2Θ = 69 ° is characteristic of the amorphous layer a-S13N4 which serves as a barrier on the silicon substrate . It is present on bare substrates and when the deposit is thinner (case of recycled) its contribution is stronger. E) - Mechanical properties: Hardness (nano-indentation)
    The nano-indentation machine is equipped with a Berkovich type indent (triangular pyramid with an angle of 65,27 ° between the vertical and the height of one of the faces of the pyramid). of the tenth rule: indent depression of less than one tenth of the thickness of the coating A measuring cycle is carried out in three stages: - Increasing load up to the maximum load, in 30 s - Maintenance maximum load for 30 s - Discharge for 30 s.
    Nano-indentation measurements were made on samples coated with new precursor (3.5 μm thick) and recycled (1 μm thick). The calculations made by the measurement and analysis software take into account a coating Poisson's ratio of 0.2. Hardness and Young's modulus measurements are shown in Table 2.
    Table 2
    The values found for the coating deposited from recycled precursor are higher for the hardness, but lower with respect to the Young's modulus. They remain in any case consistent with expected values of a very hard coating.
    权利要求:
    Claims (21)
    [1" id="c-fr-0001]
    1) A process for the chemical vapor deposition on a substrate of a protective coating composed of one or more layers, at least one being a protective layer comprising a transition metal M in the form of a material chosen from a carbide, an alloy or a metal, the method comprising the following steps: a) - disposing in a feed tank, a stock solution containing, in a hydrocarbon solvent without an oxygen atom, an bis precursor ( arene) comprising the transition metal M to be deposited and having a decomposition temperature between 300 ° C and 600 ° C, b) - vaporizing said stock solution and introducing it into a chemical vapor deposition reactor in which is located said substrate to be coated, for depositing the protective layer on said substrate at a temperature of between 300 ° C and 600 ° C under reduced pressure, c) - collecting at the outlet of the reactor a fraction of the gaseous effluent comprising the unconsumed precursor, the aromatic byproducts of the precursor and the solvent, these species together forming, under standard conditions, a daughter solution, and d) - pouring the daughter solution thus obtained into the reaction tank; supply to obtain a new mother solution suitable for use in step a).
    [0002]
    2) Process according to claim 1, wherein the step b) of vaporization and deposition and the step c) of collecting said fraction of the effluent, are carried out at a reduced pressure of between 133 Pa and 6666 Pa.
    [0003]
    3) Process according to claim 1 or 2, wherein the transition metal M is selected from Cr, Nb, V, W, Mo, Mn or Hf.
    [0004]
    4) Process according to the preceding claim, wherein the transition metal M is chromium at the zero oxidation state.
    [0005]
    5) Process according to any one of the preceding claims, wherein the precursor is a bis (arene) devoid of oxygen atom, of general formula (Ar) (Ar ') M where M is the transition metal to the degree zero oxidation and Ar, Ar ', identical or different, each represent an aromatic group of benzene or benzene type substituted by at least one alkyl group.
    [0006]
    6) Process according to the preceding claim, wherein the aromatic groups Ar and Ar 'each represent a benzene radical, or benzene substituted with one to three identical or different groups selected from a methyl, ethyl or isopropyl group.
    [0007]
    7) Method according to claim 5 or 6, wherein said stock solution contains a mixture of several precursors of general formulas (Ar) (Ar ') M different.
    [0008]
    8) A method according to any preceding claim, wherein the solvent is a monocyclic aromatic hydrocarbon of the general formula CxHy, liquid under standard conditions, having a boiling point below 150 ° C and a decomposition temperature greater than 600 ° C.
    [0009]
    9) Process according to the preceding claim, wherein the solvent is selected from benzene, or benzene substituted with one or more groups, identical or different, selected from a methyl, ethyl or isopropyl group.
    [0010]
    10) Method according to the preceding claim, wherein the solvent is toluene, mesitylene or ethylbenzene.
    [0011]
    11) A method according to any one of the preceding claims, wherein said stock solution further contains a chlorinated or sulfur-containing additive, devoid of oxygen atom and whose decomposition temperature is greater than 600 ° C.
    [0012]
    12) Process according to the preceding claim, wherein the additive is a monocyclic aromatic hydrocarbon substituted with a thiol group or at least one chlorine.
    [0013]
    13) Process according to any one of the preceding claims, wherein, in step c), the collection of said fraction comprises a selective condensation operation of the species present in the effluent at the outlet of the reactor.
    [0014]
    14) Method according to the preceding claim, wherein the selective condensation of the species is carried out by cryogenic trapping at a temperature between -200 ° C and -50 ° C.
    [0015]
    15) Method according to the preceding claim, wherein said condensed fraction is brought back to the standard conditions of temperature and pressure, and the species remaining in the liquid phase which form a daughter solution are preserved.
    [0016]
    16) A method according to any one of the preceding claims, wherein the step c) of collecting said fraction is followed by a step c) of determining the concentration of the precursor in the daughter solution obtained.
    [0017]
    17) Method according to the preceding claim, wherein step d) comprises an operation dO) of adjusting the concentration of the precursor, depending on the concentration of the precursor of the daughter solution discharged into the feed tank.
    [0018]
    18) A method according to any one of the preceding claims, wherein the step c) of collecting said fraction is followed by a step c2) of storing the daughter solution.
    [0019]
    19) Method according to any one of the preceding claims, wherein the steps a) to c) are repeated sequentially N times and the N daughter solutions are collected, then step d) is carried out by pouring said N daughter solutions into the feed tank to obtain a new mother solution suitable for use in step a).
    [0020]
    20) Process according to any one of claims 1 to 17, wherein the daughter solution obtained in step c) is discharged continuously in the feed tank, during the chemical vapor deposition process.
    [0021]
    The method of any of the preceding claims, wherein said substrate to be coated is a metal, alloy, ceramic or silicon piece.
    类似技术:
    公开号 | 公开日 | 专利标题
    EP3390686B1|2019-11-20|Method for depositing a coating by dli-mocvd with direct recycling of the precursor compound
    EP2250298B1|2011-07-13|Method and system for depositing a metal or metalloid on carbon nanotubes
    WO2008009714A1|2008-01-24|Method for depositing hard metallic coatings
    FR2493348A1|1982-05-07|METHOD AND DEVICE FOR PHYSICAL VAPOR DEPOSITION OF HARD COATING PRODUCTS, IN PARTICULAR FOR TOOLS
    FR3013061A1|2015-05-15|METHOD OF MANUFACTURING ALIGNED NANOSTRUCTURES ON A SCREW AND CONTINUOUSLY AND ASSOCIATED DEVICE
    EP2899295B1|2016-09-14|Method for producing a thin layer of formula MYx by ALD
    Yasuoka et al.2008|Fabrication of PTFE thin films by dual catalytic chemical vapor deposition method
    Gebhard et al.2016|An efficient PE-ALD process for TiO 2 thin films employing a new Ti-precursor
    EP2387626B1|2013-06-26|Organometal complexes for chemical vapour deposition of platinum
    WO2008009715A9|2009-02-26|Method for depositing non-oxide ceramic coatings
    FR2643071A1|1990-08-17|LOW TEMPERATURE STEAM DEPOSITION PROCESS OF A NITRIDE OR METAL CARBONITRIDE CERAMIC COATING
    EP3049545B1|2019-04-24|Method for depositing an anti-corrosion coating
    WO2009037397A1|2009-03-26|Method for preparation of a nanocomposite material by vapour phase chemical deposition
    EP3109201A1|2016-12-28|Silica- and carbon nanotube-based biphasic material
    FR2928938A1|2009-09-25|Depositing metal e.g. tin or metalloid e.g. silicon on carbon nanotubes, comprises mixing carbon nanopowder with a precursor formed of alkali metals or metalloids, and continuously introducing the impregnated carbon nanotubes in a reactor
    FR3006307A1|2014-12-05|OBTAINING A SOLID FORM COMPRISING BORAZANE STABILIZED THERMALLY THERE SOLID FORM AND ITS USE TO GENERATE HYDROGEN
    Martin et al.2018|A Volatile Dialane Complex from
    EP3795714A1|2021-03-24|Process for the generation of aluminum-containing films
    Bhar et al.2010|Pulse laser ablated thin film of BN and related diagnostics
    Kang et al.2008|Study of selective deposition of TaN thin films on OTS patterned Si | substrates
    Onoe et al.2001|In-situ X-ray photoelectron spectroscopic and scanning tunneling microscopic studies on the structure of C~ 6~ 0 photopolymers
    WO2001040533A1|2001-06-07|Method and installation for selective surface treatment
    同族专利:
    公开号 | 公开日
    RU2699126C1|2019-09-03|
    US20200123655A1|2020-04-23|
    EP3390686A1|2018-10-24|
    KR20180089515A|2018-08-08|
    WO2017103546A1|2017-06-22|
    US20190003048A1|2019-01-03|
    JP2019502023A|2019-01-24|
    FR3045673B1|2020-02-28|
    US11142822B2|2021-10-12|
    EP3390686B1|2019-11-20|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    EP1664379A1|2003-09-19|2006-06-07|Akzo Nobel N.V.|Metallization of substrate by a liquid/vapor deposition process|
    WO2007106462A2|2006-03-14|2007-09-20|Praxair Technology, Inc.|Temperature controlled cold trap for a vapour deposition process and uses thereof|
    WO2008009714A1|2006-07-21|2008-01-24|Institut National Polytechnique De Toulouse |Method for depositing hard metallic coatings|
    WO2008009715A1|2006-07-21|2008-01-24|Institut National Polytechnique De Toulouse |Method for depositing non-oxide ceramic coatings|US10811146B2|2016-09-28|2020-10-20|Commissariat A L'energie Atomique Et Aux Energies Alternatives|Method of using DLI-MOCVD to provide a nuclear reactor component with a coating of amorphous chromium carbide|
    US11104994B2|2016-09-28|2021-08-31|Commissariat A L'energie Atomique Et Aux Energies Alternatives|Nuclear component with metastable Cr coating, DLI-MOCVD method for producing same, and uses for controlling oxidation/hydridation|SU1453950A1|1987-01-07|1994-06-30|А.И. Костылев|Steam-gaseous mixture for pyrolytic application of protective coatings made of on the chrome-base|
    FR2643071B1|1989-02-16|1993-05-07|Unirec|LOW TEMPERATURE STEAM DEPOSITION PROCESS OF A NITRIDE OR METAL CARBONITRIDE CERAMIC COATING|
    SU1759958A1|1990-04-19|1992-09-07|Дзержинский филиал Ленинградского научно-исследовательского и конструкторского института химического машиностроения|Pyrolytic method of depositing chromium carbide coat on metal surfaces|
    JPH0412525A|1990-05-02|1992-01-17|Babcock Hitachi Kk|Chemical vapor growth device for organic metal|
    JP5277784B2|2008-08-07|2013-08-28|東京エレクトロン株式会社|Raw material recovery method, trap mechanism, exhaust system, and film forming apparatus using the same|
    RU2513496C2|2012-05-31|2014-04-20|Федеральное государственное унитарное предприятие "Научно-производственное объединение "Радиевый институт имени В.Г. Хлопина"|Chromium-based wearproof metal coating and method of its application|
    KR102197576B1|2012-11-06|2020-12-31|어플라이드 머티어리얼스, 인코포레이티드|Apparatus for spatial atomic layer deposition with recirculation and methods of use|
    JP6101958B2|2013-02-13|2017-03-29|日本パイオニクス株式会社|Ammonia and hydrogen recovery and reuse methods|
    JP2015151564A|2014-02-13|2015-08-24|東洋製罐グループホールディングス株式会社|Atomic layer deposition film formation apparatus|EP3847294A1|2018-09-03|2021-07-14|Applied Materials, Inc.|Direct liquid injection system for thin film deposition|
    法律状态:
    2016-12-29| PLFP| Fee payment|Year of fee payment: 2 |
    2017-06-23| PLSC| Publication of the preliminary search report|Effective date: 20170623 |
    2018-01-02| PLFP| Fee payment|Year of fee payment: 3 |
    2019-12-30| PLFP| Fee payment|Year of fee payment: 5 |
    2020-12-28| PLFP| Fee payment|Year of fee payment: 6 |
    2021-12-31| PLFP| Fee payment|Year of fee payment: 7 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1562862|2015-12-18|
    FR1562862A|FR3045673B1|2015-12-18|2015-12-18|METHOD FOR DEPOSITING A DLI-MOCVD COATING WITH RECYCLING OF THE PRECURSOR COMPOUND|FR1562862A| FR3045673B1|2015-12-18|2015-12-18|METHOD FOR DEPOSITING A DLI-MOCVD COATING WITH RECYCLING OF THE PRECURSOR COMPOUND|
    JP2018531355A| JP6997711B2|2015-12-18|2016-12-17|Film formation method by DLI-MOCVD with reuse of precursor compound|
    KR1020187020519A| KR20180089515A|2015-12-18|2016-12-17|Process of deposition of coating by DLI-MOCVD directly recycling the precursor compound|
    PCT/FR2016/053541| WO2017103546A1|2015-12-18|2016-12-17|Method for depositing a coating by dli-mocvd with direct recycling of the precursor compound|
    RU2018125304A| RU2699126C1|2015-12-18|2016-12-17|Method of coating deposition using dli-mocvd with repeated use of precursor compound|
    US16/063,405| US20190003048A1|2015-12-18|2016-12-17|Method for depositing a coating by dli-mocvd with direct recycling of the precursor compound|
    EP16831495.3A| EP3390686B1|2015-12-18|2016-12-17|Method for depositing a coating by dli-mocvd with direct recycling of the precursor compound|
    US16/669,854| US11142822B2|2015-12-18|2019-10-31|Method for depositing a coating by DLI-MOCVD with direct recycling of the precursor compound|
    [返回顶部]